Electrical and photovoltaic properties of amorphous chalcogenide thin-film p-n junctions

Tohge, Noboru; Kanda, Kimio; Minami, Tsutomu
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p580
Academic Journal
Amorphous chalcogenide thin-film p-n junctions have been formed between p-type As2Se3 or Ge20Se80 and n-type Ge20Bi15Se65. The rectifying behavior was observed only for the junctions which were formed by depositing the p-type films on the annealed n-type films. The forward currents in these junctions were found to be space-charge-limited, as in the previously formed p-type film/n-type bulk glass junctions. The photovoltaic properties of the thin-film p-n junctions have been improved, compared with the film/bulk glass junctions, due to the decrease in series resistance of the cells.


Related Articles

  • Magnetic properties of LaNiO[sub 3] films and Josephson characteristics of.... Sagoi, Masayuki; Kinno, Teruyuki; Yoshida, Jiro; Mizushima, Koichi // Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1833 

    Evaluates the application of LaNiO[sub 3] films to the normal layer for superconductor-normal metal-superconductor junctions. Determination of film resistivity; Dominance of Pauli paramagnetism in the film; Estimation of the coherence length of the films.

  • SrTiO[sub 3] buffer layers and tunnel barriers for Ba-K-Bi-O junctions. Baumert, B.A.; Talvacchio, J.; Forrester, M.G. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2137 

    Examines the use of SrTiO[sub 3] films as buffer layers for Ba[sub 0.6]K[sub 0.4]BiO[sub 3] (BKBO) films. Characteristics of BKBO grown on buffered substrates; Contribution of tunnel junction with barrier to voltage gap; Effectiveness of the film as buffer layers and tunnel barriers.

  • Electrical properties of CdTe films and junctions. Anthony, Thomas C.; Fahrenbruch, Alan L.; Peters, Michael G.; Bube, Richard H. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p400 

    Describes the electrical properties of the CdTe thin films and their behavior when tested in Schottky barrier and heterojunction devices. Background on CdTe film deposition; Stability of hole density in CdTe films; Properties of junctions on CdTe films.

  • Fabrication and investigation of SnO[sub 2]–As[sub 2](Se[sub 0.9]Te[sub 0.1])[sub 3] and SnO[sub 2]–(As[sub 0.67]Sb[sub 0.33])[sub 2]Se[sub 3] heterojunctions. Arzhanukhina, I. P.; Kornev, K. P.; Seleznev, Yu. V. // Technical Physics;Oct98, Vol. 43 Issue 10, p1186 

    A method for fabricating and the results of an investigation of SnO[sub 2]–As[sub 2](Se[sub 0.9]Te[sub 0.1])[sub 3] and SnO[sub 2]–(As[sub 0.67]Sb[sub 0.33])[sub 2]Se[sub 3] heterojunctions are described. The spectral and current–voltage characteristics of the...

  • The interface is still the device.  // Nature Materials;Feb2012, Vol. 11 Issue 2, p91 

    An introduction is presented in which the editor discusses various reports within the issue on topics including the formation of a conducting layer at an oxide interface, the challenges posed by the complexities of semiconducting materials, and the developments in the use of oxide thin-films.

  • Influence of junctions on photoluminescence decay in thin-film devices. Ahrenkiel, R. K. // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p2937 

    Presents a study that investigated the influence of junctions on photoluminescence decay in thin-film devices. Background on the use of the photoluminescence lifetime of thin films in determining the minority-carrier lifetime; Calculation of the effective lifetime and the bulk minority-carrier...

  • Electrical properties of covalently linked silicon/polypyrrole junctions. Vermeir, Inge E.; Kim, Namyong Y. // Applied Physics Letters;6/21/1999, Vol. 74 Issue 25, p3860 

    Studies electrodeposited polypyrrole films formed on chemically modified hydrogen-terminated silicon surfaces that expose tethered pyrrole units. Exhibition of diode-like characteristics by semiconductor/polypyrrole junctions on the native and modified substrates; Incorporation of sites on the...

  • Films and junctions of cadmium zinc telluride. Chu, T. L.; Chu, S. S.; Ferekides, C.; Britt, J. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5635 

    Presents a study which examined the films and junctions of cadmium zinc telluride direct gap semiconductors. Deposition of cadmium[sub1-x]zinc[subx] telluride films; Properties of cadmium[sub1-x]zinc[subx] telluride films; Discussion of the heterojunctions of cadmium[sub1-x]zinc[subx] telluride.

  • Electron tunneling into epitaxial films of Nd[sub 2-x]Ce[sub x]CuO[sub 4-y]. Homma, M.; Tanda, S. // Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1724 

    Presents the tunneling experiments on the planar junctions of Nd[sub 2-x]Ce[sub x]CuO[sub 4-y]. Measurement of the temperature dependencies of the gap features; Observation of the phonon structures in the normalized conductance curve; Desirability of neutron data at high energy.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics