Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

Nishino, T.; Inoue, Y.; Hamakawa, Y.; Kondow, M.; Minagawa, S.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p583
Academic Journal
We have measured the electroreflectance spectra of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy. As a result, it has been found that there exist anomalous structures in the region of the E0 and E1 band edges of this material. These anomalous structures are closely related to the recently reported ordered phase in this alloy, since these structures have never been observed with disordered Ga0.5In0.5P alloys such as bulk crystals and epitaxial layers grown by liquid phase epitaxy.


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