TITLE

Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films

AUTHOR(S)
Gildenblat, G. Sh.; Grot, S. A.; Wronski, C. R.; Badzian, A. R.; Badzian, T.; Messier, R.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p586
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Schottky diodes were fabricated using gold and aluminum contacts to thin diamond films obtained by a microwave plasma assisted chemical vapor deposition process. The current-voltage and capacitance-voltage-frequency characteristics of these devices are similar to those fabricated on a crystalline diamond base formed by traditional ultrahigh pressure process.
ACCESSION #
9827739

 

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