TITLE

Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica

AUTHOR(S)
Norton, D. P.; Ajmera, P. K.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p595
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photochemical vapor deposition of polycrystalline GaAs on synthetic fused silica is reported here. A Hg-Xe arc lamp is used as the light source with triethylgallium and arsine serving as the reactants. We report, for the first time, on a GaAs deposition process using the above-mentioned light source and reactants which is completely controlled by the light source with no deposition occurring in the absence of light. GaAs thin films of thicknesses up to 1.6 μm have been deposited. X-ray diffraction, energy-dispersive spectrometry, and optical transmittance are used to analyze these films.
ACCESSION #
9827736

 

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