Minority-carrier lifetime in GaAs thin films

Ahrenkiel, R. K.; Dunlavy, D. J.; Benner, J.; Gale, R. P.; McClelland, R. W.; Gormley, J. V.; King, B. D.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p598
Academic Journal
Double-heterostructure devices of type AlxGa1-xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.


Related Articles

  • High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates. Venkatasubramanian, R.; Timmons, M.L. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p886 

    Describes an approach to attain high quality gallium arsenide-aluminum gallium arsenide (GaAs-AlGaAs) thin film heterostructures on silicon using eutectic-metal-bonding. Involvement of the lattice-matched growth of thin films on germanium substrates; Presentation of room-temperature...

  • High-temperature growth of epitaxial NiAl thin films on AlAs by molecular-beam epitaxy. Kamigaki, Kousei; Yuda, Shinji; Kato, Hiromu; Ishida, Masaya; Terauchi, Hikaru; Sano, Naokatsu; Hiyamizu, Satoshi // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2196 

    Presents information on a study which investigated the growth temperature dependence of the epitaxy and crystallinity of NiAl films. Growth of NiAl thin films on AlAs/gallium arsenide single heterostructures at various growth temperatures; Observation on the x-ray scattering spectra; Structural...

  • Two-dimensional versus three-dimensional excitons in wide GaAs quantum wells. Kusano, Jun-ichi; Bauer, Gerrit E.W.; Aoyagi, Yoshinobu // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p289 

    Excitons confined in high-quality GaAs/Al0.19Ga0.81As double heterostructures have been studied experimentally and theoretically with emphasis on phenomena associated with the transition from a two-dimensional exciton in a quantum well to a three-dimensional exciton in a thin film. Exciton...

  • Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al[sub 0.35]Ga[sub 0.65]As(001) two-dimensional electron gas heterostructures. Cuenya, B. Roldan; Doi, M.; Keune, W.; Hoch, S.; Reuter, D.; Wieck, A.; Schmitte, T.; Zabel, H. // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1072 

    An optimized heterostructure design and an optimized surface sputter-cleaning procedure allow the growth of high-quality epitaxial Fe(001) thin films at T[sub s] < ∼50°C on selectively doped GaAs/Al[sub 0.35]Ga[sub 0.65]As heterostructures, while retaining the high quality transport...

  • Influence of N on the electronic properties of GaAsN alloy films and heterostructures. Reason, M.; Jin, Y.; McKay, H. A.; Mangan, N.; Mao, D.; Goldman, R. S.; Bai, X.; Kurdak, C. // Journal of Applied Physics;Nov2007, Vol. 102 Issue 10, p103710 

    We have investigated the effects of N on the electronic properties of Si-doped GaAs1-xNx alloy films and AlGaAs/GaAsN modulation-doped heterostructures. For bulk-like alloy films, the electron mobility is independent of free carrier concentration and arsenic species, and decreases with...

  • Digging up bulk band dispersion buried under a passivation layer. Kobayashi, Masaki; Muneta, Iriya; Schmitt, Thorsten; Patthey, Luc; Ohya, Sinobu; Tanaka, Masaaki; Oshima, Masaharu; Strocov, Vladimir N. // Applied Physics Letters;12/10/2012, Vol. 101 Issue 24, p242103 

    We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to ∼100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX)...

  • The deposition of a GaS epitaxial film on GaAs using an exchange reaction. Xin, Q.-S.; Conrad, S.; Zhu, X.-Y. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1244 

    A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched...

  • Bond-length strain in buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001). Woicik, J. C.; Gupta, J. A.; Watkins, S. P.; Crozier, E. D. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    The bond lengths in a series of strained, buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external...

  • The anomalous bandgap bowing in GaAsN. Tisch, U.; Finkman, E.; Salzman, J. // Applied Physics Letters;7/15/2002, Vol. 81 Issue 3, p463 

    The composition dependence of the fundamental bandgap of thin, pseudomorphic GaAs[sub 1-x]N[sub x] layers (0≤x≤5%) on GaAs substrates is studied by optical transmission measurements and high resolution x-ray diffraction. We present a very large set of consistent experimental data. An...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics