Minority-carrier lifetime in GaAs thin films

Ahrenkiel, R. K.; Dunlavy, D. J.; Benner, J.; Gale, R. P.; McClelland, R. W.; Gormley, J. V.; King, B. D.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p598
Academic Journal
Double-heterostructure devices of type AlxGa1-xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.


Related Articles

  • High-temperature growth of epitaxial NiAl thin films on AlAs by molecular-beam epitaxy. Kamigaki, Kousei; Yuda, Shinji; Kato, Hiromu; Ishida, Masaya; Terauchi, Hikaru; Sano, Naokatsu; Hiyamizu, Satoshi // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2196 

    Presents information on a study which investigated the growth temperature dependence of the epitaxy and crystallinity of NiAl films. Growth of NiAl thin films on AlAs/gallium arsenide single heterostructures at various growth temperatures; Observation on the x-ray scattering spectra; Structural...

  • High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates. Venkatasubramanian, R.; Timmons, M.L. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p886 

    Describes an approach to attain high quality gallium arsenide-aluminum gallium arsenide (GaAs-AlGaAs) thin film heterostructures on silicon using eutectic-metal-bonding. Involvement of the lattice-matched growth of thin films on germanium substrates; Presentation of room-temperature...

  • Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al[sub 0.35]Ga[sub 0.65]As(001) two-dimensional electron gas heterostructures. Cuenya, B. Roldan; Doi, M.; Keune, W.; Hoch, S.; Reuter, D.; Wieck, A.; Schmitte, T.; Zabel, H. // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1072 

    An optimized heterostructure design and an optimized surface sputter-cleaning procedure allow the growth of high-quality epitaxial Fe(001) thin films at T[sub s] < ∼50°C on selectively doped GaAs/Al[sub 0.35]Ga[sub 0.65]As heterostructures, while retaining the high quality transport...

  • Two-dimensional versus three-dimensional excitons in wide GaAs quantum wells. Kusano, Jun-ichi; Bauer, Gerrit E.W.; Aoyagi, Yoshinobu // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p289 

    Excitons confined in high-quality GaAs/Al0.19Ga0.81As double heterostructures have been studied experimentally and theoretically with emphasis on phenomena associated with the transition from a two-dimensional exciton in a quantum well to a three-dimensional exciton in a thin film. Exciton...

  • Influence of N on the electronic properties of GaAsN alloy films and heterostructures. Reason, M.; Jin, Y.; McKay, H. A.; Mangan, N.; Mao, D.; Goldman, R. S.; Bai, X.; Kurdak, C. // Journal of Applied Physics;Nov2007, Vol. 102 Issue 10, p103710 

    We have investigated the effects of N on the electronic properties of Si-doped GaAs1-xNx alloy films and AlGaAs/GaAsN modulation-doped heterostructures. For bulk-like alloy films, the electron mobility is independent of free carrier concentration and arsenic species, and decreases with...

  • Digging up bulk band dispersion buried under a passivation layer. Kobayashi, Masaki; Muneta, Iriya; Schmitt, Thorsten; Patthey, Luc; Ohya, Sinobu; Tanaka, Masaaki; Oshima, Masaharu; Strocov, Vladimir N. // Applied Physics Letters;12/10/2012, Vol. 101 Issue 24, p242103 

    We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film protected by an amorphous As layer with thickness exceeding the typical probing depths of vacuum-ultraviolet rays up to ∼100 eV. Increasing the probing depth by increasing photon energy into the soft x-ray (SX)...

  • Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers. Pfeiffer, K.-F. G.; Tautz, S.; Kiesel, P.; Steen, C.; Malzer, S.; Do¨hler, G. H. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    We report on an approach to investigate the deep electronic defect centers in low-temperature grown GaAs (LT-GaAs). Using an extremely thin LT-GaAs layer (comparable with the penetration depth of an electric field in bulk material) incorporated in the i layer of a p-i-n diode, we are able to...

  • The deposition of a GaS epitaxial film on GaAs using an exchange reaction. Xin, Q.-S.; Conrad, S.; Zhu, X.-Y. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1244 

    A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched...

  • Bond-length strain in buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001). Woicik, J. C.; Gupta, J. A.; Watkins, S. P.; Crozier, E. D. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    The bond lengths in a series of strained, buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics