TITLE

Minority-carrier lifetime in GaAs thin films

AUTHOR(S)
Ahrenkiel, R. K.; Dunlavy, D. J.; Benner, J.; Gale, R. P.; McClelland, R. W.; Gormley, J. V.; King, B. D.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p598
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Double-heterostructure devices of type AlxGa1-xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.
ACCESSION #
9827733

 

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