Annealing studies of YBa2Cu3O7-x thin films

Shah, S. I.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p612
Academic Journal
In situ electrical resistance measurements, differential thermal analysis, and x-ray diffraction studies were carried out between room temperature and 950 °C on as-grown amorphous insulating YBa2Cu3O7-x thin films. Results for the phase transformation reaction path are reported in order to optimize the post-deposition annealing process. Amorphous-to-crystalline transformations were observed at 550 °C along with a reversible orthorhombic-tetragonal transition near 670 °C. Eutectic melting above 850 °C was also noted, which restricts the maximum annealing temperature to around 850 °C.


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