TITLE

Plasma oxidation of Ba2YCu3O7-y thin films

AUTHOR(S)
Tamura, H.; Yoshida, A.; Morohashi, S.; Hasuo, S.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p618
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We studied the effects of plasma oxidation on the electrical properties of Ba2YCu3O7-y thin films. Films were prepared by electron beam evaporation, then annealed in oxygen. Plasma oxidation, performed in a barrel reactor, lowered the room-temperature resistivity of films and raised the zero-resistance temperature. Film resistivity increased a few percent a day after plasma oxidation. The rate of resistivity increase is several times that of untreated samples. Changes in resistivity and critical temperature could be completely reversed by repeated plasma treatment.
ACCESSION #
9827716

 

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