Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Kalem, Ş.; Chyi, J.; Litton, C. W.; Morkoç, H.; Kan, S. C.; Yariv, A.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p562
Academic Journal
InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm-3 ) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.


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