Radiation-induced enhancement of minority-carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive

Wang, Xie W.; Wang, Yu; Nishioka, Yasushiro; da Silva, Eronides F.; Ma, T. P.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p592
Academic Journal
It has been found that the minority-carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with very small amounts (much smaller than typically used) of trichloroethane can be substantially enhanced by x-ray irradiation. The depth profile data showed that, immediately after irradiation, the lifetimes in a region close to the SiO2/Si interface would increase significantly while those in the deeper depletion region remained unchanged. Thereafter, the lifetimes throughout the region profiled (1–2 μm) would continuously change with time, and would eventually stabilize at a level much higher than that prior to irradiation. The time constant for lifetimes to reach steady state is typically 1–2 days at room temperature. These results will be explained in terms of the passivation of the generation-recombination centers in Si by liberated Cl after irradiation.


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