TITLE

Hot-electron transport in a graded band-gap base heterojunction bipolar transistor

AUTHOR(S)
Hayes, J. R.; Harbison, J. P.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p490
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter we report the direct observation of electron heating in an electric field using hot-electron spectroscopy. The device structure used for the study was a graded band-gap base heterojunction bipolar transistor, fabricated in the GaAs/AlGaAs semiconductor alloy system. A thermal electron distribution at 4.2 K was injected from the emitter into the base of a transistor that was compositionally graded to yield a quasielectric field of 20 kV cm-1 . The equilibrium electron distribution was heated by the electric field and could be characterized at the end of the 900 Ã… base region by an effective electron temperature of 650 K.
ACCESSION #
9827673

 

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