TITLE

Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition

AUTHOR(S)
Taira, K.; Kawai, H.; Hase, I.; Kaneko, K.; Watanabe, N.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p495
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAs/GaAs single quantum well structures have been grown by metalorganic chemical vapor deposition. The grown wells are 1.03, 1.3, and 1.7 InAs monolayers thick. The 4 K photoluminescence spectra exhibit strong and narrow peaks, their energy decreasing smoothly with increasing well thickness. The noninteger value is interpreted on the model that the interface is macroscopically flat but has valleys and hills with their lateral extent smaller than excitons. The effective interface position is determined by their relative lateral extent.
ACCESSION #
9827670

 

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