Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition

Taira, K.; Kawai, H.; Hase, I.; Kaneko, K.; Watanabe, N.
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p495
Academic Journal
InAs/GaAs single quantum well structures have been grown by metalorganic chemical vapor deposition. The grown wells are 1.03, 1.3, and 1.7 InAs monolayers thick. The 4 K photoluminescence spectra exhibit strong and narrow peaks, their energy decreasing smoothly with increasing well thickness. The noninteger value is interpreted on the model that the interface is macroscopically flat but has valleys and hills with their lateral extent smaller than excitons. The effective interface position is determined by their relative lateral extent.


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