Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen

Massoud, Hisham Z.
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p497
Academic Journal
The oxidation of heavily phosphorus-doped (100) and (111) silicon in the 800–1000 °C range in dry oxygen was studied in the thin-film regime using in situ ellipsometry. The oxide growth kinetics indicate that, in the initial stages of oxidation, phosphorus piles up at the Si-SiO2 interface, resulting in a decrease in the surface concentration of electrically active phosphorus and an oxidation rate similar to that of lightly doped silicon. As the oxide grows, the surface concentration of electrically active phosphorus reaches and exceeds its bulk value, and the SiO2 growth rate gradually becomes similar to that of heavily doped silicon in the thick-film regime. An empirical model is introduced to account for the influence of this reverse dopant redistribution on SiO2 growth kinetics in the thin-film regime.


Related Articles

  • Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations. Dalla Torre, J.; Bocquet, J.-L.; Limoge, Y.; Crocombette, J.-P.; Adam, E.; Martin, G.; Baron, T.; Rivallin, P.; Mur, P. // Journal of Applied Physics;7/15/2002, Vol. 92 Issue 2, p1084 

    We present molecular dynamics simulations directed at understanding self-limiting oxidation of nanoclusters. Atomic oxygen is inserted in an atom-by-atom way in the silicon bonds to form silicon oxide. First, we focus on planar oxidation to calibrate our model and test its capabilities. Then, we...

  • Publisher’s Note: “Silicon oxide thickness-dependent growth of carbon nanotubes” [Appl. Phys. Lett. 84, 109 (2004)]. Anyuan Cao, B.; Ajayan, P.M.; Ramanath, G.; Baskaran, R.; Turner, K. // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p2002 

    Presents a correction to the article "Silicon oxide thickness-dependent growth of carbon nanotubes," published in the previous issue of "Applied Physics Letters".

  • In situ sensor for interstitial trapping during Si thermal oxidation using He implantation-induced voids. Raineri, Vito; Giuffrida, Stella; Rimini, Emanuele // Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3959 

    The shrinkage of voids created by He implants in silicon has been measured during thermal oxidation. The empty volume is filled by self-interstitials injected during oxidation. The increase in volume is proportional to the oxide thickness and follows the same time dependence. The captured...

  • Linear rate oxidation of silicon for oxidation effect investigation. Mizuo, Shoichi; Higuchi, Hisayuki // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p587 

    Oxidation of Si was performed by varying oxygen partial pressure during oxidation. A linear relation between oxide thickness and oxidation time was obtained under a linear increase of oxygen partial pressure. The effect of linear oxidation was examined on B and P diffusion in Si. Linear rate...

  • Fast shrinkage of oxidation stacking faults during O2/NF3 oxidation of silicon. Kim, U. S.; Jaccodine, R. J. // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1201 

    The behavior of oxidation-induced stacking faults (OSF’s) during the O2/NF3 oxidation of silicon has been investigated in the temperature range of 850–1100 °C. A very fast shrinkage rate of pregrown OSF in silicon and a nonlinear shrinkage rate with time have been observed. The...

  • Polarizable capacitance versus voltage characteristics for metal, oxide, and silicon capacitors passivated by various oxide glasses. Kobayashi, Keiji // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1600 

    It was found experimentally that polarizable capacitance versus voltage (C-V) characteristics for metal-oxide-silicon (MOS) capacitors, passivated by various oxide glasses, depend on molar polarizability for passivation glasses. Experimental data showed C-V curve shifts toward higher voltage...

  • Atomic oxygen and the thermal oxidation of silicon. Hoff, Andrew M.; Ruzyllo, Jerzy // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1264 

    Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an...

  • Observation of a doping-dependent orientation effect of the depletion of silicon self-interstitials during oxidation. Tan, T. Y.; Yang, K. H.; Schneider, C. P. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p1812 

    Studies a doping-dependent orientation effect of the depletion of silicon self-interstitials during oxidation. Growth kinetics of the oxidation-induced stacking faults of silicon wafers; Interpretation of the effect of oxidation; Characteristics of the orientation effects.

  • Kinetics of ultrathin SiO2 growth. Murali, V.; Murarka, S. P. // Journal of Applied Physics;9/15/1986, Vol. 60 Issue 6, p2106 

    Presents a study that proposed a model for explaining the initial rapid oxidation of silicon in dry oxygen. Description of oxidation model; Schematic representation of the concept of the oxygen-diffused zone in silicon; Details on the oxide-film-controlled oxidation process.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics