TITLE

Theoretical approach to the electronic states and core exciton of superlattice ZnSe/GaAs

AUTHOR(S)
Shen, Dingli; Zhang, Kaiming; Fu, Rouli
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p500
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The energy-band structures of superlattice ZnSe/GaAs(001) are calculated using the semiempirical tight binding method. The fundamental gap and effective mass are studied with the variation of layer thickenss. The appearance of core excitons related to impurities B, Al, and Ga is found to be possible in (ZnSe)5/(GaAs)5, qualitatively consistent with a Ga-bound exciton peak observed in a corresponding heterojunction experiment. It is proposed that interface states would exist at the conduction-band edge of this material.
ACCESSION #
9827667

 

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