Enhancement in activation efficiency for a SiF3-implanted GaAs layer by a new annealing method

Tamura, Akiyoshi; Inoue, Kaoru; Onuma, Takeshi
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p503
Academic Journal
We have found a new phenomenon in which the activation efficiency of a SiF3 -implanted GaAs layer is increased by the preimplant thermal treatment of the semi-insulating GaAs substrate with SiO2 encapsulant.


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