High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array

Baillargeon, J. N.; York, P. K.; Zmudzinski, C. A.; Fernández, G. E.; Beernink, K. J.; Coleman, J. J.
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p457
Academic Journal
Data are presented on high-power strained-layer InGaAs quantum well heterostructure laser arrays. These devices are periodic nonplanar arrays, formed by a single metalorganic chemical vapor deposition growth over a selectively etched corrugated GaAs substrate. The corrugation serves to provide both stripe definition and index guiding while suppressing lateral lasing perpendicular to the stripes. Maximum pulsed optical powers of 2.5 W/facet (width=1600 μm, length=440 μm) for an emission wavelength of 1.03 μm have been obtained from uncoated devices having threshold current densities in the range 290–600 A/cm2. Far-field radiation patterns indicate that the arrays are phase locked.


Related Articles

  • Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Reed, M. J.; Reed, M.J.; El-Masry, N. A.; El-Masry, N.A.; Parker, C. A.; Parker, C.A.; Roberts, J. C.; Roberts, J.C.; Bedair, S. M.; Bedair, S.M. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    We report on the critical layer thickness of GaN/In[sub x]Ga[sub 1-x]N/GaN double heterostructures in the composition range 0

  • Negative differential resistances from Hg1-xCdxTe-CdTe single quantum barrier heterostructures. Chow, D. H.; McGill, T. C. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1485 

    A novel negative differential resistance device is proposed and analyzed theoretically. The proposed device is a Hg1-xCdxTe-CdTe-Hg1-xCdxTe single quantum barrier heterostructure with 0.2≤x≤0.4. The anticipated negative differential resistance is a consequence of the unique...

  • Room-temperature negative differential resistance in strained-layer GaAs-AlGaAs-InGaAs quantum well heterostructures. Lee, G. S.; Hsieh, K. Y.; Kolbas, R. M. // Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1528 

    We report the first room-temperature experimental observation of negative differential resistance in a strained-layer double barrier resonant tunneling structure. Room-temperature negative differential resistance (peak-to-valley ratio=1.4) was observed in GaAs-AlGaAs-InxGa1-xAs-AlGaAs-GaAs...

  • Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers. Leopold, M. M.; Specht, A. P.; Zmudzinski, C. A.; Givens, M. E.; Coleman, J. J. // Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1403 

    The temperature dependence of threshold current in graded-index, separate-confinement-heterostructure, single quantum well lasers has been investigated and analyzed. The conventional parameter used to describe this temperature dependence, T0, is measured and shown to increase with cavity length....

  • Stripe-geometry AlxGa1-xAs-GaAs quantum well lasers via hydrogenation. Jackson, G. S.; Pan, N.; Feng, M. S.; Stillman, G. E.; Holonyak, N.; Burnham, R. D. // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1629 

    Data are presented on stripe-geometry gain-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (‘‘hydrogenation’’) of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser...

  • Depth-dependent native-defect-induced layer disordering in AlxGa1-xAs-GaAs quantum well heterostructures. Guido, L. J.; Holonyak, N.; Hsieh, K. C.; Baker, J. E. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p262 

    Photoluminescence measurements on annealed single-well Alx Ga1-x As-GaAs quantum well heterostructures demonstrate that layer disordering caused by native defects is strongly depth dependent. The depth-dependent layer disordering, as well as the corresponding depth-dependent net carrier...

  • Zn disordering of a Ga0.5In0.5P-(AlxGa1-x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition. Meehan, K.; Dabkowski, F. P.; Gavrilovic, P.; Williams, J. E.; Stutius, W.; Hsieh, K. C.; Holonyak, N. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2136 

    It is well established by now that epitaxial layers of (AlxGa1-x)0.5In0.5P and Ga0.5In0.5P grown on (001) GaAs substrates by metalorganic chemical vapor deposition at temperatures below 700 °C show an ordered arrangement of the group III atoms on the column III sublattice, resulting in a...

  • Photopumped phonon-assisted laser operation (77 K) of In0.5(AlxGa1-x)0.5P quantum well heterostructures. Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Kuo, C. P.; Fletcher, R. M.; Osentowski, T. D.; Craford, M. G. // Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2446 

    The photopumped phonon-assisted laser operation (612 nm, 77 K) of a high-gap In1-y(AlxGa1-x)yP quantum well heterostructure (QWH) lattice matched to GaAs (y≊0.5) is identified using a single rectangular sample that is shifted in its heat sinking from (a) low Q when clamped onto Au (bare...

  • Weak localization in p-type quantum wells. Averkiev, N. S.; Golub, L. E.; Pikus, G. E. // Semiconductors;Oct98, Vol. 32 Issue 10, p1087 

    A weak-localization theory is derived for quantum heterostructures with strong spin-orbit interaction that predicts anomalous magnetoresistance. This theory treats real quantum wells with a few occupied quantum-well subbands. It is shown that in the presence of intense elastic transitions...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics