High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array

Baillargeon, J. N.; York, P. K.; Zmudzinski, C. A.; Fernández, G. E.; Beernink, K. J.; Coleman, J. J.
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p457
Academic Journal
Data are presented on high-power strained-layer InGaAs quantum well heterostructure laser arrays. These devices are periodic nonplanar arrays, formed by a single metalorganic chemical vapor deposition growth over a selectively etched corrugated GaAs substrate. The corrugation serves to provide both stripe definition and index guiding while suppressing lateral lasing perpendicular to the stripes. Maximum pulsed optical powers of 2.5 W/facet (width=1600 μm, length=440 μm) for an emission wavelength of 1.03 μm have been obtained from uncoated devices having threshold current densities in the range 290–600 A/cm2. Far-field radiation patterns indicate that the arrays are phase locked.


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