TITLE

Two-dimensional electron gas at a Ga0.47In0.53As/ (AlxGa1-x)0.48In0.52As interface

AUTHOR(S)
Ben Amor, S.; Dmowski, L.; Portal, J. C.; Praseuth, J. P.; Goldstein, L.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p479
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the first observation of a two-dimensional electron gas in (AlGa) InAs/GaInAs heterostructures. Angular-dependent Shubnikov–de Haas oscillations and quantum Hall effect prove the two dimensionality of the system. We discuss the effect of the barrier composition on the electronic structure of the system. A significant number of electrons remain confined even for the smallest confinement barrier. Persistent photoconductivity was observed at low temperature.
ACCESSION #
9827633

 

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