Al0.3Ga0.7As/GaAs metal-insulator-semiconductor-type field-effect transistor fabricated on an InP substrate

Agarwala, S.; Patil, M. B.; Peng, C. K.; Morkoç, H.
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p493
Academic Journal
A metal-insulator-semiconductor-type Al0.3Ga0.7As/GaAs field-effect transistor with 1-μm-long by 145-μm-wide gates and intrinsic transconductance of 180 mS/mm has been demonstrated on an InP substrate. The dislocation propagation is minimized by incorporating a superlattice on InP, and a 1.5 μm undoped GaAs buffer layer is grown prior to the actual channel to ensure good quality of the 250 Å active layer. A channel mobility of 1920 cm2/(V s) and a carrier concentration of 1.28×1018 cm-3 have been measured at 300 K. The device exhibits excellent pinch-off, and the gate-to-source reverse breakdown voltage is greater than 5 V. The low output conductance of 2.5 mS/mm indicated small parallel conduction in the undoped GaAs buffer layer. Also, very little hysteresis was found in the current-voltage characteristics, implying few traps in the epilayer.


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