Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon

Winer, K.; Street, R. A.
August 1988
Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p505
Academic Journal
We study interstitial doping in amorphous hydrogenated silicon (a-Si:H) by indiffusion of lithium at 230 °C using secondary ion mass spectrometry, photothermal deflection spectroscopy (PDS), and electron spin resonance. Lithium is distributed nonuniformly in the films with peak concentrations within 300 nm of either interface. Lithium doping introduces up to 1018 paramagnetic defects per cc in a-Si:H (g=2.0061, ΔHp.p. =5.2 G), equal to the concentration of deep defects created as measured by PDS. The nature of these defects is discussed.


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