TITLE

Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH4]4)

AUTHOR(S)
Wayda, A. L.; Schneemeyer, L. F.; Opila, R. L.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Conductive (150 μΩ cm), adherent films of zirconium and hafnium borides have been deposited on various substrates by the low-temperature (100–270 °C) thermal decomposition of Zr[BH4]4 and Hf[BH4]4. Auger electron spectroscopy of these films shows that their composition is ZrB2 and HfB2. The film surfaces are oxidized and slightly carbon contaminated. However, the bulk contains less than 1 at. % C or O. This synthesis is by far the lowest temperature preparation of these materials (plasma-enhanced chemical vapor deposition of TiB2 requires 480–600 °C) and holds great promise for the use of these materials in electronics applications.
ACCESSION #
9827618

 

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