Surface-field-induced tunnel junctions on InAs

Kunze, U.; Kowalsky, W.
August 1988
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p367
Academic Journal
We report on tunneling between the two-dimensional electron inversion layer on a degenerate p-InAs substrate and the three-dimensional bulk valence states in Yb/oxide/InAs tunnel junctions. The current-voltage characteristics show negative differential conductance with current peak-to-valley ratio up to 2.7 (17) at T=300 K (77 K). The inversion layer is induced by the high electric surface field that arises from the low work function of the Yb electrode. Tunneling across the oxide provides a low-resistive contact of the metal to the electron layer.


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