TITLE

Electron transport in heterostructure hot-electron diodes

AUTHOR(S)
Arnold, D.; Hess, K.; Iafrate, G. J.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p373
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Vertical electron transport in GaAs/AlxGa1-xAs heterostructures is investigated through Monte Carlo simulations of the heterostructure hot-electron diode (HHED). A fully self-consistent ensemble Monte Carlo algorithm with a realistic numerical band structure is employed. Results show that transport in the HHED is dominated by the influence of the heterointerface closest to the emitting contact. Two distinct modes of conduction are observed. One is a low-conductivity regime where transport is predominantly by gamma valley tunneling. The other is a high-conductivity regime where transport is mainly due to thermionic emission of electrons from the GaAs to the AlxGa1-xAs. In the latter most of the electrons are in the L and X valleys when they transfer to the wide-gap material. In these valleys the propagation from GaAs to AlxGa1-xAs is virtually unimpeded as the band-edge discontinuities are small in contrast to the situation for gamma electrons.
ACCESSION #
9827612

 

Related Articles

  • Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode. Higman, T. K.; Miller, L. M.; Favaro, M. E.; Emanuel, M. A.; Hess, K.; Coleman, J. J. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1623 

    We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset....

  • Self-consistent Monte Carlo study of high-field carrier transport in graded heterostructures. Al-Omar, A.; Krusius, J. P. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3825 

    Presents a study which investigated hot-electron transport over graded Al[subx]Ga[sub1-x]As heterostructures using the self-consistent ensemble Monte Carlo method. Function of heterostructure launchers; Improvements that resulted from the advances in submicron lithography and heteroepitaxy;...

  • Ballistic transport in hot-electron transistors. Xu, Jingming; Shur, Michael // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3816 

    Presents a study which demonstrated that the performance of hot-electron transistors and other ballistic devices can be greatly improved if a focused beam of energetic electrons is injected into the active region of a high-speed device. Estimation of the characteristic length of the ballistic...

  • Ultra bright surface emission from a distributed Bragg reflector hot electron light emitter. O'Brien, A.; Balkan, N. // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p366 

    Demonstrates the ultrabright stimulated emission from hot electron light emitting and laser semiconductor heterostructure (HELLISH-1) device. Comparison between the operation of HELLISH-1 and ultrabright HELLISH-1 (UB-HELLISH-1); Detection of super radiant emission with an improved full width;...

  • Measurement of the effective temperature of majority carriers under injection of hot minority.... Belenky, G.L.; Kastalsky, A. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2247 

    Proposes an electrical method for measuring the effective temperature of majority carriers under the injection of hot minority carriers in heterostructures. Determination of holes in the p-type indium gallium arsenide layer; Characterization of the three-terminal heterostructure device;...

  • Voltage switching and oscillations in a single barrier heterostructure hot-electron diode. Krotkus, A.; Reklaitis, A. // Journal of Applied Physics;10/1/1998, Vol. 84 Issue 7, p3980 

    Reports on a study which investigated the ability of heterostructure hot-electron diodes as high-frequency generators. Analysis of semiconductor devices; In-depth look at the dispersal of electrons; Methodology used to conduct the study; Results of the study.

  • Dynamics of heterostructure hot-electron diodes. Arnold, D.; Hess, K.; Higman, T.; Coleman, J. J.; Iafrate, G. J. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1423 

    Presents information on a study which examined the switching speed of a heterostructure hot-electron diode (HHED). Illustration of an experimental current-voltage characteristic; Mechanisms underlying the switching of HHED and the effect of electron-electron interactions; Transient analysis.

  • Consideration of the thermal energy in hydrodynamic transport models. Curow, Matthias // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2063 

    Examines the behavior of hot electron devices using hydrodynamic transport models. Contribution of thermal energy to hydrodynamic transport model; Calculation of the electron transport parameters; Role of the electric field in potential energy estimation; Reliability and differences of the model.

  • Ballistic electron transport across collector barriers in AlGaAs/GaAs hot-electron transistors. Kuzuhara, M.; Kim, K.; Arnold, D.; Hess, K. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1252 

    A Monte Carlo calculation has been performed to simulate the experiment of Heiblum and co-workers [Phys. Rev. Lett. 55, 2200 (1985)], regarding ballistic electron transport and the electron transit time across the AlGaAs collector barrier region in AlGaAs/GaAs tunneling hot-electron transfer...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics