Memory phenomena in heterojunction structures: Evidence for suppressed thermionic emission

Beltram, Fabio; Capasso, Federico; Walker, John F.; Malik, Roger J.
August 1988
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p376
Academic Journal
The physics of a new GaAs/AlGaAs floating-gate memory device is investigated. Long electron storage times (e.g., 4 h at 140 K) have been measured and linked to the indirect nature of the GaAs-AlAs conduction-band discontinuity. A simple analysis of the structure shows that scattering-assisted tunneling processes and band-structure effects, not included in standard thermionic emission theories, must be considered to properly account for the observed long retention times.


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