TITLE

Heteroepitaxial growth of InP on a GaAs substrate by low-pressure metalorganic vapor phase epitaxy

AUTHOR(S)
Horikawa, H.; Ogawa, Y.; Kawai, Y.; Sakuta, M.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p397
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Good quality InP was successfully grown on (100)GaAs 2° off normal toward [011] substrates by introducing low-temperature grown GaAs/InP double buffer layers. It was found that addition of a thin GaAs buffer layer (20 nm thick) grown at low temperature (430 °C) between the GaAs substrate and an InP buffer layer was effective for improving the crystal quality. The full width at half-maximum of the x-ray rocking curve was as narrow as 200 arcsec for a 6-μm-thick InP layer. An electron mobility of 15 000 cm2/(V s) at 77 K was obtained for an unintentionally doped layer. The intensity of the photoluminescence at 77 K was as good as that for an InP substrate.
ACCESSION #
9827597

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics