TITLE

Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

AUTHOR(S)
Spah, R. J.; Hess, H. F.; Stormer, H. L.; White, A. E.; Short, K. T.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p441
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Superconducting thin films of Dy-Ba-Cu-O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low-temperature substrate kept below 600 °C followed by an in situ anneal below 400 °C. Thin films of Dy-Ba-Cu-O which were fully superconducting at 40 K have been fabricated by this in situ growth process.
ACCESSION #
9827568

 

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