Zn1-xCoxSe: A new diluted magnetic semiconductor grown by molecular beam epitaxy

Jonker, B. T.; Krebs, J. J.; Prinz, G. A.
August 1988
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p450
Academic Journal
We have grown single-crystal epilayers of the new diluted magnetic semiconductor Zn1-xCox Se on GaAs(001) substrates by molecular beam epitaxy. X-ray θ-2θ and double-crystal rocking curve measurements were used to obtain the variation in lattice parameter and evaluate crystalline quality. Temperature-dependent electron paramagnetic resonance and superconducting quantum interference device magnetometry data confirm the substitutional nature of the Co2+ in the zinc site and paramagnetic behavior.


Related Articles

  • Molecular-beam epitaxy of (Zn,Mn)Se on Si(100). Slobodskyy, T.; Rüster, C.; Fiederling, R.; Keller, D.; Gould, C.; Ossau, W.; Schmidt, G.; Molenkamp, L. W. // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6215 

    We have investigated the growth by molecular-beam epitaxy of the II–VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron...

  • Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their.... Munekata, H.; Zaslavsky, A.; Fumagalli, P.; Gambino, R.J. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2929 

    Examines the preparation and characteristics of (indium,manganese)arsenide/(gallium,aluminum)antimony magnetic semiconductor heterostructures grown by molecular beam epitaxy. Analysis of the magnetotransport and magnetooptical properties of the materials; Origin of the perpendicular...

  • Molecular beam epitaxial growth and characterization of the dilute magnetic semiconductor Zn1-xFexSe. Jonker, B. T.; Krebs, J. J.; Qadri, S. B.; Prinz, G. A. // Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p848 

    We report the growth by molecular beam epitaxy of the dilute magnetic semiconductor Zn1-xFexSe on GaAs(100) substrates. The epilayers were characterized in situ by reflection high-energy electron diffraction and Auger electron spectroscopy, and by x-ray θ-2θ and rocking curve measurements....

  • Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy. Yokota, T.; Fujimura, N.; Wada, T.; Hamasaki, S.; Ito, T. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7905 

    Diluted magnetic semiconductors, Si:Ce thin films with the Ce concentration below 1.5 at. %, were prepared by solid source molecular beam epitaxy. Magnetization curves (M-H) for all the samples show superparamagnetic behaviors at least up to 300 K. Temperature dependence of the magnetic...

  • Interlayer coupling in (In,Mn)As/InAs/(In,Mn)As magnetic semiconductor trilayer structures. Yanagi, S.; Munekata, H.; Kitamoto, Y.; Oiwa, A.; Slupinski, T. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7902 

    p-(In,Mn)As/n-InAs/p-(In,Mn)As trilayer structures have been prepared by molecular beam epitaxy on GaSb/GaAs/GaAs(001) substrates. Ferromagnetic coupling has been found between the two magnetic p-(In,Mn)As layers with a rather thick n-InAs layer (d∼30 nm). The magnitude of the ferromagnetic...

  • Optical properties of Zn[sub 1-x]Mn[sub x]Te epilayers grown by molecular beam epitaxy. Shih, Y. T.; Chiang, W. C.; Yang, C. S.; Kuo, M. C.; Chou, W. C. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2446 

    Zn[sub 1-χ]Mn[sub χ]Te (0≤[sub χ]≤0.268) epilayers were grown on GaAs(001) substrates by molecular beam epitaxy. The optical properties of the epilayers were studied using reflectivity, transmission, and photoluminescence (PL) measurements. The energy gaps of the...

  • N-type doping of the diluted magnetic semiconductor Zn[sub 1] [sub x]Mn[sub x]Se. Abad, H.; Jonker, B.T. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2412 

    Investigates the n-type doping of the diluted magnetic semiconductor Zn[sub 1] [sub x]Mn[sub x]Se. Utilization of zinc chloride as the dopant source; Use of molecular beam epitaxy in growing samples with varying concentrations and carrier densities; Characterization of the semiconductors using...

  • Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy. De Boeck, J.; Oesterholt, R. // Applied Physics Letters;5/6/1996, Vol. 68 Issue 19, p2744 

    Presents a molecular beam epitaxy process for fabricating nanometer magnetic gallium arsenide thin film with ferromagnetic manganese arsenide (MnAs) precipitates. Processes used in the formation of the particles; Structural and room-temperature magnetic properties of the films; Incorporation of...

  • Magnetic and transport properties of III-V based magnetic semiconductor (GaMn)As: Growth... Shimizu, Hiromasa; Hayashi, Toshiaki; Nishinaga, Tatau; Tanaka, Masaaki // Applied Physics Letters;1/18/1999, Vol. 74 Issue 3, p398 

    Studies growth condition dependence of magnetic and transport properties of magnetic semiconductor (GaMn)As grown by low-temperature molecular-beam epitaxy (LT-MBE). Effect of substrate temperature and overpressure on growth of (Ga[sub 1-x]Mn[sub x])As; Importance of the selection of MBE growth...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics