Growth and microstructure of Bi-Sr-Ca-Cu-O thin films

Shah, S. I.; Jones, G. A.
August 1988
Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p429
Academic Journal
Thin superconducting Bi-Sr-Ca-Cu-O films have been grown by reactive magnetron sputtering with an average cation ratio of 2:2:1:2 on single-crystal (100)MgO. Films show a superconducting transition onset at 117 K, but do not go to zero resistance until 83–84 K. Secondary electron microscopy and electron beam microprobe showed two major phases with different compositions and morphologies. The dominant phase was a lamellar phase with composition very close to the 2:2:1:2 cation ratio. The second phase had a needle-like morphology, which was deficient in Bi, and had excess Cu. The nonsuperconducting Sr14-xCaxCu24O41 phase had been known to exist in bulk; therefore, the needle phase could be an intermediate step in the formation of Sr14-xCaxCu24O41 phase as Bi deficiency in the needles increased with increasing annealing temperature and/or time.


Related Articles

  • Microstructures of YBa2Cu3O7-x superconducting thin films grown on a SrTiO3(100) substrate. Chen, C. H.; Kwo, J.; Hong, M. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p841 

    We report microstructures of superconducting YBa2Cu3O7-x thin films epitaxially grown on a SrTiO3(100) substrate. Transmission electron microscopy studies reveal epitaxial, highly ordered grains ∼5000 Å in size for both types of films with either the a or c axis perpendicular to the...

  • Surface resistance and penetration depth of YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films on.... Jaekel, Christian; Waschke, Christian // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3326 

    Examines the surface resistance and penetration depth of YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films on silicon at ultrahigh frequencies. Dependence of surface resistance on film thickness; Association of weak links with microstructure formation; Range of the critical film thickness.

  • Crystallization behavior of sol-gel derived Pb(Zr,Ti)O[sub 3] thin films and the polarization.... Amanuma, Kazushi; Hase, Takashi // Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3140 

    Examines the microstructure of sol-gel derived Pb(Zr,Ti)O[sub 3] thin films. Use of Auger electron spectroscopy and transmission electron microscopy; Depth profile of the material resulting from crystallization into perovskite phase; Interface characteristics after 10[sub 8] polarization...

  • Microstructure evolution induced by scanned laser annealing in Al interconnects. Hau-Riege, C.S.; Thompson, C.V. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1464 

    Describes a method developed for inducing controlled microstructural evolution in thin films patterned into lines using scanned laser annealing. Types of microstructures resulting from scanned laser annealing.

  • Transition from lateral to transverse phase separation during film co-deposition. Adams, C.D.; Atzmon, M.; Cheng, Y.-T.; Srolovitz, D.J. // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2535 

    Investigates distinct types of phase-separated microstructures in co-deposited aluminum-germanium films. Observation of lateral phase separation; Components of the microstructures; Kinetics of the phase separation process.

  • Structural investigation of aromatic polyimide films modified by ion beams: A comparative study. Dong Xu; Xinglong Xu; Shichang Zou // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3110 

    Investigates the structure of modified polyimide films irradiated with boron ion beams. Use of Raman spectroscopy and X-ray photoelectron; Formation of graphite bonding; Effect of dose and beam current density on the microstructure.

  • Growth of high quality amorphous silicon films with significantly improved stability. Dalal, Vikram L.; Ping, E.X. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1862 

    Examines the improved stability of amorphous silicon (a-Si:H) films. Effects of boron on the microstructure of a-Si:H; Production of high quality films by low hydrogen concentration; Need for excessive Si--H bonding to achieve stable a-Si:H film.

  • Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing. Kang, S.H.; Morris Jr., J.W. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p196 

    Presents a statistical analysis of the evolution of polygranular segment lengths during high-temperature annealing of Al(Cu) thin-film interconnects with quasi-bamboo microstructures. Preparation of the samples; Microstructural modification by post-pattern annealing; Distribution of longest...

  • Off-axis electron holography of epitaxial FePt films. McCartney, M.R.; Smith, David J.; Farrow, R. F. C.; Marks, R. F. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2461 

    Investigate the magnetic microstructure of thin epitaxial FexPt1-x ordered alloy thin films using off-axis electron holography at the nanometer level. Defective areas associated with local perturbations of the in-plane magnetic field; Variations in phase shifts in the vacuum.

  • The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature. Liang, Y. H.; Maley, N.; Abelson, J. R. // Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3704 

    Presents a study which described the electronic properties, stability and microstructure of a-Si:H films grown at high substrate temperature by direct current reactive magnetron sputtering. Background on the sample materials; Methodology; Results.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics