Pb1-xEuxS films prepared by hot wall epitaxy

Ishida, A.; Nakahara, N.; Okamura, T.; Sase, Y.; Fujiyasu, H.
July 1988
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p274
Academic Journal
Pb1-x EuxS films were prepared for the first time using hot wall epitaxy technique. X-ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).


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