TITLE

Pb1-xEuxS films prepared by hot wall epitaxy

AUTHOR(S)
Ishida, A.; Nakahara, N.; Okamura, T.; Sase, Y.; Fujiyasu, H.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p274
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pb1-x EuxS films were prepared for the first time using hot wall epitaxy technique. X-ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).
ACCESSION #
9827534

 

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