TITLE

Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

AUTHOR(S)
Sofo, J. O.; Proetto, C. R.; Balseiro, C. A.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p282
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAlxAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.
ACCESSION #
9827528

 

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