Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy

Bethea, C. G.; Levine, B. F.; Yen, M. Y.; Cho, A. Y.
July 1988
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p291
Academic Journal
We report the molecular beam epitaxial growth of InAs0.22Sb0.78 on semi-insulating GaAs substrates, and the fabrication and characterization of photoconductance detectors.


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