TITLE

Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

AUTHOR(S)
Blood, P.; Fletcher, E. D.; Foxon, C. T.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p299
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function of cavity length and temperature, we conclude that the optical scattering losses are very low, that the gain-current characteristics are similar to alloy barrier devices, and that there is evidence for current leakage by recombination in the barriers.
ACCESSION #
9827520

 

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