Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

Blood, P.; Fletcher, E. D.; Foxon, C. T.
July 1988
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p299
Academic Journal
We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function of cavity length and temperature, we conclude that the optical scattering losses are very low, that the gain-current characteristics are similar to alloy barrier devices, and that there is evidence for current leakage by recombination in the barriers.


Related Articles

  • GaAs double quantum well laser diode with short-period (AlGaAs)m(GaAs)n superlattice barriers. Imamoto, H.; Sato, F.; Imanaka, K.; Shimura, M. // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1388 

    A short-period (AlGaAs)m(GaAs)n superlattice has been applied to the barrier layers in a single and a multiple quantum well structure prepared by molecular beam epitaxy in order to improve the interface quality. With a 38 Ã… thin GaAs quantum well without employing aluminum, a low threshold...

  • InAsP/InGaAsP quantum-well 1.3 µm vertical-cavity surface-emitting lasers. Lao, Y.-F.; Cao, C.-F.; Wu, H.-Z.; Cao, M.; Gong, Q. // Electronics Letters;1/15/2009, Vol. 45 Issue 2, p105 

    1.3 µm vertical-cavity surface-emitting lasers based on a novel gain media consisting of InAsP/InGaAsP strain-compensated multiple quantum wells are reported. SiO2/TiO2 dielectric thin-film pairs and wafer-bonded GaAs/Al(Ga)As distributed Bragg reflectors are used as the top and bottom cavity...

  • Coherent linear and two-dimensional arrays of multiple quantum well grating-surface-emitting diode lasers emitting at 1.5 μm. Palfrey, S. L.; Enstrom, R. E.; VanGieson, E. A.; Hammer, J. M.; Martinelli, Ramon U.; Carlson, N. W.; Evans, G. A.; Andrews, J. T.; Appert, J.; Stolzenberger, R.; Triano, A. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2753 

    We have demonstrated linear and two-dimensional arrays of grating-surface-emitting lasers operating at 1.5 μm. The gain sections are 400-μm-long InGaAs/InGaAsP multiple quantum well ridge-guide diode lasers, connected by waveguide output sections of 300-μm-long...

  • High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers. Chen, T. R.; Eng, L. E.; Zhuang, Y. H.; Xu, Y. J.; Zaren, H.; Yariv, A. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2762 

    Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics.

  • High-efficiency carrier collection and stimulated emission in thin (50 Ã…) pseudomorphic InxGa1-xAs quantum wells. Anderson, N. G.; Lo, Y. C.; Kolbas, R. M. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p758 

    Efficient collection of photoexcited electrons and holes by thin, strained quantum wells is demonstrated in an In0.16Ga0.84As-GaAs pseudomorphic quantum well heterostructure laser. The undoped laser structure, which was grown by molecular beam epitaxy, consists of five 50 Ã… pseudomorphic...

  • Impurity-induced layer-disordered buried heterostructure AlxGa1-xAs-GaAs quantum well edge-injection laser array. Deppe, D. G.; Jackson, G. S.; Holonyak, N.; Hall, D. C.; Burnham, R. D.; Thornton, R. L.; Epler, J. E.; Paoli, T. L. // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p392 

    A laser array is described that makes use of edge injection into two sides (two ‘‘edges’’) of a stack of three AlxGa1-xAs-GaAs multiple quantum well active regions. The edge-injection array is realized by impurity-induced layer disordering, which forms a higher gap...

  • Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices. Dallesasse, J. M.; Holonyak, N.; Sugg, A. R.; Richard, T. A.; El-Zein, N. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2844 

    Data are presented on the conversion (selective conversion) of high-composition (AlAs)x(GaAs)1-x layers, e.g., in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures...

  • Comparative Analysis of Long-Wavelength (1.3μm) VCSELs on GaAs Substrates. Maleev, N. A.; Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Vasil’ev, A. P.; Ustinov, V. M.; Ledentsov, N. N.; Alferov, Zh. I. // Semiconductors;Jul2001, Vol. 35 Issue 7, p847 

    Two designs of vertical-cavity surface-emitting lasers (VCSELs) for the 1.3 µm spectral range on GaAs substrates with active regions based on InAs/InGaAs quantum dots and InGaAsN quantum wells are considered. The relationship between the active region properties and optical microcavity...

  • Cavity length dependence of the wavelength of strained-layer InGaAs/GaAs lasers. Chen, T. R.; Zhuang, Y. H.; Eng, L. E.; Yariv, A. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2402 

    The lasing wavelength of a strained-layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics