TITLE

High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine

AUTHOR(S)
Saxena, R. R.; Fouquet, J. E.; Sardi, V. M.; Moon, R. L.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p304
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source.
ACCESSION #
9827516

 

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