TITLE

High-speed planar GaAs photoconductors with surface implant layers

AUTHOR(S)
Anderson, Gordon Wood; Papanicolaou, Nicolas A.; Thompson, Phillip E.; Boos, John B.; Carruthers, Thomas F.; Ma, David I; Mack, Ingham A. G.; Modolo, John A.; Kub, Francis J.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p313
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective implantation of silicon into GaAs is demonstrated as a simple method for modifying the response characteristics of low-doped planar GaAs photoconductors for optoelectronic circuits with varying requirements. Response times and sensitivities of the photoconductors were strongly dependent on the implantation dose and energy. Rise times and full width at half-maximum (FWHM) values of devices receiving low-dose implants were of the order of 40–150 ps. Rise times and FWHM values of devices which received higher dose implants were in the ranges 50–140 ps and 1–5 ns, respectively. The sensitivity of devices which received higher dose implants was about a factor of 100 (20 dB in optical power) greater than that of devices which received lower dose implants.
ACCESSION #
9827512

 

Related Articles

  • Radiation-thermal activation of silicon implanted in gallium arsenide. Ardyshev, V. M.; Surzhikov, A. P. // Semiconductors;Jun99, Vol. 33 Issue 6, p636 

    The layer density, density profile, and mobility of electrons in [sup 28]Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range T[sub a] = 590-830 �C are...

  • Effect of the Insulator—Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing. Ardyshev, V. M.; Ardyshev, M. V.; Khludkov, S. S. // Semiconductors;Jan2000, Vol. 34 Issue 1, p70 

    The depth-concentration profiles n(x) of [sup 28]Si implanted into semiinsulating GaAs (E[sup 1] = 50 keV, F[sup 1] = 8.75 x 10[sup 12] cm[sup -2]; E[sub 2] = 75 keV, F[sub 2] = 1.88 x 10[sup -12] cm[sup -2]) were studied by C-V-measurements after the electron-beam annealing (P = 7.6 W/cm², t...

  • Ion-beam synthesis and stability of GaAs nanocrystals in silicon. White, C.W.; Budai, J.D. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2389 

    Synthesizes gallium arsenide (GaAs) buried inside silicon using sequential implantation of Ga and As into silicon followed by thermal annealing. Existence of the GaAs in the form of nanocrystals; Discussion of the thermodynamic criteria important in determining whether the desired compound will...

  • Effect of light on the DX centers in Si- and Te-doped GaAlAs. Seguy, Patrice; Yu, Peter Y.; Li, Ming-fu; Leon, Rosa; Chan, K. T. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2469 

    Deep level transient spectroscopy (DLTS) and constant temperature capacitance transient measurements have been performed on the DX centers under light illumination in GaAlAs alloys doped with Si and Te. Assuming that the effect of light is to ionize the DX centers, experimental DLTS spectra have...

  • Si diffusion and segregation in low-temperature grown GaAs. Kavanagh, K.L.; Chang, J.C.P.; Kirchner, P.D.; Warren, A.C.; Woodall, J.M. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p286 

    Investigates the silicon (Si)-doped low-temperature gallium arsenide (LT-GaAs) semiconductors by molecular beam epitaxy. Use of constant diffusion coefficients; Development of internal Si peaks; Accumulation of As precipitates near the undoped/doped LT-GaAs interface.

  • Highly doped GaAs:Si by molecular beam epitaxy. Sacks, Robert; Shen, H. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p374 

    Highly doped (N[sup ++]) GaAs:Si with n up to 1.8 × l0[sup 19] cm[sup -3] has been grown by molecular beam epitaxy at a "normal" growth rate of ∼0.8 m/h[sup -1]. These layers have been studied by Raman spectroscopy, van der Pauw-Hall measurements, and capacitance-voltage plotting. They...

  • Activation mechanism for Si implanted into semi-insulating GaAs. Hyuga, Fumiaki; Watanabe, Kazuo; Osaka, Jiro; Hoshikawa, Keigo // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1742 

    Hall effect and photoluminescence are measured for Si-implanted and SiO2-capped annealed GaAs, and for S-implanted and SiN-capped annealed GaAs. These experimental data are compared with those for Si-implanted and SiN-capped annealed GaAs. No remarkable change in sheet carrier concentration (Ns)...

  • Special Features of Electrical Activation of [sup 28]Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing. Ardyshev, V. M.; Ardyshev, M. V.; Khludkov, S. S. // Semiconductors;Jan2000, Vol. 34 Issue 1, p27 

    Concentration profiles of [sup 28]Si implanted in single-crystal and epitaxial GaAs were determined by measuring the C-V-characteristics after the postimplantation rapid thermal annealings for 12 s at T = 825,870, and 905°C. The temperature dependence of Hall mobility of electrons in the...

  • Compensation mechanism in silicon-doped gallium arsenide nanowires. Ketterer, B.; Mikheev, E.; Uccelli, E.; Fontcuberta i Morral, A. // Applied Physics Letters;11/29/2010, Vol. 97 Issue 22, p223103 

    P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4×1018 cm-3, silicon incorporates mainly in arsenic sites. For higher concentrations,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics