TITLE

GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating

AUTHOR(S)
Wu, M. C.; Boenke, M. M.; Wang, S.; Clark, W. M.; Stevens, E. H.; Utlaut, M. W.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report for the first time, the performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR). Stripes of Si++ with a period of 2300 Å and a dose ∼1014 cm-2 are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 °C are obtained. The wavelength tuning rate with temperature is 0.8 Å/°C. The coupling coefficient is estimated to be 15 cm-1. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
ACCESSION #
9827483

 

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