TITLE

Constant-current-density model for the anomalous Hall effects in Hg0.8Cd0.2Te

AUTHOR(S)
Pan, D. S.; Lu, Y.; Chu, M.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p307
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter presents a simple model developed for calculating the Hall coefficient and Hall mobility in inhomogeneous narrow-band-gap semiconductors, including inclusions with opposite conduction type. The model is based on one assumption that the current density is a uniform constant in the sample in spite of the inhomogeneities. This assumption is supported by a variational calculation based on the principle of least entropy production rate. The model is then applied to explain the anomalous Hall data in the n-type Hg0.8Cd0.2Te, and a good fit is obtained when p-type Hg0.8Cd0.2Te is considered to be the inclusions. The results show that some assumptions in a previous layer model are not necessary in order to explain the observed phenomena. By using this simplified treatment of material inhomogeneity, it will be easier to design experiments to investigate the cause of such inhomogeneity.
ACCESSION #
9827476

 

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