TITLE

Recrystallization of AlNx (x<1) thin films induced by N implantation

AUTHOR(S)
Kobayashi, K.; Namba, S.; Fujihana, T.; Kobayashi, T.; Dai, Y.; Iwaki, M.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p185
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of ion implantation on recrystallization of films has been investigated using AlNx (x<1) films as targets. The 750 Å AlNx (x<1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10-6 Torr. The x-ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x<1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
ACCESSION #
9827459

 

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