Fast diffusion component of ion-implanted arsenic in thermally grown silicon dioxide

Lee, S.-Tong; Fellinger, P.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p189
Academic Journal
A fast diffusing species of ion-implanted arsenic has been observed in silicon dioxide annealed in a nitrogen annealing ambient. Below 1020 cm-3 concentration this arsenic diffuses 20× faster at 1100 °C than the slow arsenic found in oxidizing ambient. The effective activation energy of diffusion of this fast arsenic is 0.71 eV, in sharp contrast to 4.3 and 4.0 eV for the slow arsenic in O2 and O2 /H2 O, respectively. The fast species is believed to be arsenic occupying either the oxygen site or interstitial site in the SiO2 network.


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