TITLE

Intrinsic stress in narrow silicon metal-oxide-semiconductor field-effect transistors: Magnetotransport measurements

AUTHOR(S)
Paquin, N.; Pepper, M.; Gundlach, A.; Ruthven, A.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p198
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measurements of the Hall (ρxy) and transverse (ρxx) resistivities in narrow polycrystalline silicon-gated Si(100) field-effect transistors have been obtained. The measurements were carried out both with and without externally applied uniaxial stress. Analysis of the results suggests the presence of large compressive intrinsic edge stresses. A model based on device fabrication is developed to explain the presence of these edge stresses.
ACCESSION #
9827449

 

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