Resonant tunneling through a Si/GexSi1-x/Si heterostructure on a GeSi buffer layer

Rhee, S. S.; Park, J. S.; Karunasiri, R. P. G.; Ye, Q.; Wang, K. L.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p204
Academic Journal
Resonant tunneling of holes through an unstrained GeSi well between two strained Si barriers on a relaxed GeSi buffer layer has been observed for the first time. The peak-to-valley ratios of 2.1/1 at 4.2 K and 1.6/1 at 77 K in current-voltage characteristics were attained for light holes. Resonant tunneling from heavy-hole states was also observed at room temperature, as well as 77 and 4.2 K by conductance measurement. The positions of the resonance peaks are in good agreement with the light- and heavy-hole bound states in the quantum well.


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