TITLE

Parametric study of AlAs/GaAs superlattice double-barrier diodes

AUTHOR(S)
Paulus, M. J.; Bozada, C. A.; Huang, C. I.; Dudley, S. C.; Evans, K. R.; Stutz, C. E.; Jones, R. L.; Cheney, M. E.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.
ACCESSION #
9827441

 

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