TITLE

Resonant photoluminescence excitation in GaAs grown directly on Si

AUTHOR(S)
Zemon, S.; Jagannath, C.; Shastry, S. K.; Miniscalco, W. J.; Lambert, G.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p213
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with donor-related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.
ACCESSION #
9827436

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics