TITLE

Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor

AUTHOR(S)
Beltram, Fabio; Capasso, Federico; Luryi, Serge; Chu, Sung-Nee G.; Cho, Alfred Y.; Sivco, Deborah L.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p219
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Operation of a new resonant tunneling transistor is reported in the AlGaAs/GaAs material system. The device contains an undoped quantum well collector separated from a heavily doped emitter by a thin tunnel barrier. The collector is gated and the gate field controls resonant tunneling characteristics ‘‘from behind’’ via a combination of the generalized Stark effect and the quantum capacitance effect. The common-collector characteristics show negative differential resistance at a fixed gate bias and negative transconductance at a fixed emitter bias. Excellent agreement is found between the measured and calculated shifts of the peaks of the current-voltage characteristics.
ACCESSION #
9827434

 

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