TITLE

Minority-carrier properties of GaAs on silicon

AUTHOR(S)
Ahrenkiel, R. K.; Al-Jassim, M. M.; Dunlavy, D. J.; Jones, K. M.; Vernon, S. M.; Tobin, S. P.; Haven, V. E.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p222
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.
ACCESSION #
9827433

 

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