Warpage of GaAs-on-Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy

Chand, N.; van der Ziel, J. P.; Weiner, J. S.; Sergent, A. M.; Cho, A. Y.; Grim, K. A.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p225
Academic Journal
The warpage of GaAs-on-Si wafers, caused by the different thermal expansion coefficients of GaAs and Si, has been studied as a function of the GaAs thickness on 3-in.-diam Si wafers. The warpage increases from 7 to 52 μm as the GaAs layer thickness increases from 1.2 to 4.2 μm. Under vacuum clamping conditions the GaAs/Si wafers can be forced to the original flatness. By growing GaAs selectively through a Si shadow mask as islands of 1 mm×1 mm size with a periodicity of 2 mm in a 5 cm×5 cm central area of the wafer, the warpage is reduced considerably. Spatially resolved cathodoluminescence (CL) spectra indicated that the tensile strain is reduced significantly within 10 μm from the edge of the growth. Near the edge, the CL intensity is also increased indicating a reduction in nonradiative recombination at defects. The use of the Si shadow mask to obtain patterned growth is relatively simple, requiring no processing step before or after the growth, and has a great potential in the integration of GaAs and Si circuits or devices.


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