Synchrotron x-ray standing-wave study of arsenic on Si(100)

Zegenhagen, J.; Patel, J. R.; Kincaid, B. M.; Golovchenko, J. A.; Mock, J. B.; Freeland, P. E.; Malik, R. J.; Huang, K.-G.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p252
Academic Journal
The position of As atoms on the silicon(100) surface has been determined using the x-ray standing-wave technique and synchrotron radiation. Since the experiments were performed in air, the As-covered (100) surface was capped with amorphous silicon. The results of the measurements are in agreement with the symmetric As dimer model for the (100) surface. The distance of the As dimers normal to the ideal (100) surface was found to be 1.26±0.01 Å which agrees with the value obtained from total energy minimization calculations. With no protective coating the As position was higher.


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