Inhomogeneous gain saturation in a mode-locked semiconductor laser

Serenyi, M.; Göbel, E. O.; Kuhl, J.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p169
Academic Journal
The saturation of the light-dc prebias current characteristic of an actively mode-locked GaAs/AlGaAs semiconductor laser with external resonator reveals a pronounced dependence on lasing wavelength and peak intensity of the mode-locked pulses. The latter effect is attributed to inhomogeneous gain saturation.


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