Photoluminescence and the band structure of InAsSb strained-layer superlattices

Kurtz, S. R.; Osbourn, G. C.; Biefeld, R. M.; Lee, S. R.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p216
Academic Journal
Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.


Related Articles

  • Electronic and optical properties of periodically Si delta-doped InP grown by low pressure... Souza, P.L.; Yavich, B.; Pamplona-Pires, M.; Henriques, A. B.; Gonçcalves, L. C. D. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1700 

    Investigates the mobility and photoluminescence characteristics of a series of Si delta-doped InP superlattices as a function of the superlattice period. Electronic transport; Broad band emission detected for the periodic structures at energies higher than the InP band gap; Depth profile.

  • CdTe photoluminescence in HgTe-CdTe superlattices. Feldman, Bernard J.; Wroge, M. L.; Leopold, D. J. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1516 

    Presents a study which investigated CdTe photoluminescence in HgTe-CdTe superlattices. Details of the experimental techniques used; Explanation for the presence of deep-level lines in the superlattices; Illustration of the liquid-helium photoluminescence spectrum of HgTe-CdTe superlattice.

  • Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice. Guan, Z. P.; Kobayashi, T. // Applied Physics Letters;9/30/1996, Vol. 69 Issue 14, p2074 

    The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in...

  • Effect of growth interruptions on the interfaces of InGaAs/AIAsSb superlattice. Georgiev, Nikolai; Mozume, Teruo // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2371 

    Investigates the effect of growth interruption times combined with selective group-V species exposure of short-period superlattice structure with photoluminescence, x-ray diffraction and reflection high-energy electron diffraction. X-ray diffraction spectrum of a 30-period superlattice growth...

  • Photoluminescence from Si/Ge superlattices. Montie, E. A.; van de Walle, G. F. A.; Gravesteijn, D. J.; van Gorkum, A. A.; Bulle-Lieuwma, C. W. T. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p340 

    We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1-xGex alloy buffer layer. X-ray diffraction and Rutherford backscattering were used to analyze the composition of the samples. Luminescence bands at 1.5 and 1.6 μm originate from the...

  • Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device. Kunold, A.; Pereyra, P. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5018 

    The optical response of an AlGaN/GaN/(In[sub x]Ga[sub 1-x]N)[sup n]/GaN/AlGaN heterostructure is obtained from precise, and comparatively simple, transition probability calculations. A comprehensive approach to evaluate these quantities from rigorous expressions of the heterostructure's energy...

  • Layer intermixing in heavily carbon-doped AlGaAs/GaAs superlattices. Szafranek, I.; Szafranek, M.; Cunningham, B. T.; Guido, L. J.; Holonyak, N.; Stillman, G. E. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5615 

    Investigates layer intermixing in heavily carbon-doped AlGaAs/GaAs superlattices. Details of experimental techniques used; Analysis of the dominant feature in the low-temperature photoluminescence spectra of superlattice crystals; Effects of encapsulation on the extent of interface smearing in...

  • Photoluminescence studies of ZnTe-CdTe strained-layer superlattices. Miles, R. H.; Wu, G. Y.; Johnson, M. B.; McGill, T. C.; Faurie, J. P.; Sivananthan, S. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1383 

    Photoluminescence from ZnTe-CdTe strained-layer superlattices has been observed for the first time. Superlattices with CdTe and ZnTe layer thicknesses between 20 and 51 Ã… have been compared with CdxZn1-xTe alloys. The superlattices display intense visible photoluminescence which is observed...

  • Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices. Beery, J. G.; Laurich, B. K.; Maggiore, C. J.; Smith, D. L.; Elcess, K.; Fonstad, C. G.; Mailhiot, C. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p233 

    We describe the growth, ion beam, and photoluminescence characterization of Ga1-xInxAs/GaAs strained-layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics