Photoluminescence and the band structure of InAsSb strained-layer superlattices

Kurtz, S. R.; Osbourn, G. C.; Biefeld, R. M.; Lee, S. R.
July 1988
Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p216
Academic Journal
Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.


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