Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface

Hundhausen, M.; Ichiguchi, T.; Shiraki, Y.
July 1988
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p110
Academic Journal
A parallel arrangement of thin wires has been fabricated in the AlxGa1-xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.


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