Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

Gal, M.; Orders, P. J.; Usher, B. F.; Joyce, M. J.; Tann, J.
July 1988
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p113
Academic Journal
Variation in the magnitude and sign of the strain in GaAs/InGaAs/GaAs single quantum wells are studied as a function of layer thickness using photoluminescence spectroscopy. It is found that as the compressively strained ternary layer relaxes with increasing thickness, a tensile strain is introduced in the GaAs capping layer. This reduces the GaAs band gap and lifts the degeneracy of the valence band, which becomes light hole in character.


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