Optical saturation of intersubband absorption in GaAs-AlxGa1-xAs quantum wells

Julien, F. H.; Lourtioz, J.-M.; Herschkorn, N.; Delacourt, D.; Pocholle, J. P.; Papuchon, M.; Planel, R.; Le Roux, G.
July 1988
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p116
Academic Journal
We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1-xAs/GaAs/AlxGa1-xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.


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