TITLE

Nonlinear subgap photoconductivity of polycrystalline silicon

AUTHOR(S)
Bock, W.; Prettl, W.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photoconductance of polycrystalline silicon films at photon energies smaller than the band gap has been measured as a function of intensity applying a 1.3 μm wavelength semiconductor laser. The observed photosignal increases superlinearly at low intensities and saturates above about 1.5 W/cm-2. This distinct nonlinearity is caused by a significant energy dependence of optical to thermal cross sections of trap states in the band gap. Assuming a three-level-rate equation model, grain boundary trap densities were evaluated.
ACCESSION #
9827372

 

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